inchange semiconductor isc product specification isc silicon pnp darlington power transistor TIP126 description high dc current gain- : h fe = 1000(min)@ i c = - 3a collector-emitter sustaining voltage- : v ceo(sus) = -80v(min) low collector-emitter saturation voltage- : v ce(sat) = -2.0v(max)@ i c = - 3a = -4.0v(max)@ i c = - 5a complement to type tip121 applications designed for general purpose amplifier and low speed switching applications . absolute maximum ratings (ta=25 ) symbol parameter value unit v cbo collector-base voltage -80 v v ceo collector-emitter voltage -80 v v ebo emitter-base voltage -5 v i c collector current-continuous -5 a i cm collector current-peak -8 a i b b base current-dc -120 ma collector power dissipation t c =25 65 p c collector power dissipation t a =25 2 w t j junction temperature 150 t stg storage temperature range -65~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 1.92 /w r th j-a thermal resistance,junction to ambient 62.5 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon pnp darlington power transistor TIP126 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c = -0.1a, i b = 0 b -80 v v ce( sat )-1 collector-emitter saturation voltage i c = -3a, i b = -12ma b -2.0 v v ce (sat)-2 collector-emitter saturation voltage i c = -5a, i b = -20ma b -4.0 v v be (on) base-emitter on voltage i c = -3.0a; v ce = -3v -2.5 v i cbo collector cutoff current v cb = -80v, i e = 0 -0.2 ma i ceo collector cutoff current v ce = -40v, i b = 0 -0.5 ma i ebo emitter cutoff current v eb = -5v; i c = 0 -2 ma h fe-1 dc current gain i c = -0.5a; v ce = -3v 1000 h fe-2 dc current gain i c = -3.0a; v ce = -3v 1000 c ob output capacitance i e = 0; v cb = -10v, f= 0.1mhz 300 pf isc website www.iscsemi.cn
|
